Field-effect transistors and circuits fabricated from semiconducting diamond thin films

MOSFETs were fabricated on homoepitaxial diamond thin films. The current-voltage characteristics of these transistors were measured from 25/spl deg/C to 500/spl deg/C on selected samples. Improved diamond growth and device fabrication techniques resulted in improved drain-to-source current and transconductance uniformity across a sample. Selected devices exhibit drain-to-source currents and normalized transconductance values of 10 mA and 1.3 mS/mm respectively. A common-source amplifier circuit utilizing a diamond MOSFET was characterized using input signals from 20 Hz to 1 MHz and exhibited a DC gain of 5 at 250/spl deg/C. A pair of diamond MOSFETs configured as NAND and NOR digital logic gates were demonstrated operational at 400/spl deg/C.<>