Design and fabrication of high-speed InP-based heterojunction bipolar transistors

The author reports the use of a Monte Carlo technique to analyze the hot electron transport in InAlGaAs/InGaAs heterojunction bipolar transistors (HBTs) and to give a basis for designing high-speed HBTs. Monte Carlo simulation predicted that an abrupt-emitter/graded-base structure can provide a base transit time much shorter than that provided by a uniform-base structure or a fully-graded-base structure. The fabrication and characterization of self-aligned InP/InGaAs single- and double-HBTs (SHBTs and DHBTs) grown by metal organic chemical vapor deposition are outlined. Their circuit applications are described.<>