Phosphorus-rich InP grown by a one step in-situ MLEK crystal growth process

The authors have developed a means of producing P-rich InP directly from the melt by in-situ synthesis and magnetic liquid encapsulated Kyropoulos (MLEK) growth. The in-situ process relies on injecting P vapor into pure indium to form a P-rich molten compound, followed by growth of a single crystal from the P-rich melt. Such a process is useful for investigating P-rich crystals, because they can be grown directly from the supersaturated melt. P-rich melts produce crystals which have electronic properties (deep level defects) which are different and distinct from stoichiometric or In-rich crystals. These deep levels are only found if the crystal is grown from the molten supersaturated state. When a solidified charge has been obtained and remelted again, so much phosphorus is lost that crystal grown from this two-step process do not exhibit the same deep electronic levels. The density of the measured deep level defect in P-rich crystals is low compared to the background donor concentration, so that the conductivity and mobility are similar to stoichiometric crystals.<>