Semi-insulating InP:Fe grown on Si

Metal organic chemical vapor deposition of undoped and Fe-doped InP on vicinal Si[001] and Si(111) is reported. Semi-insulating InP on Si(111) with a resistivity of 3 /spl times/ 10/sup 7/ /spl Omega/cm has been made for the first time. The resistivity increases with decreasing defect density in the InP:Fe epitaxial layers. In InP/Si(111), a considerable reduction of crystal defects by one order of magnitude was found as compared to InP/Si[001]. In consequence, the undesired defect induced effects of strong Si incorporation and incorporation of electrically inactive Fe are almost suppressed.<>