One step growth of buried heterostructures on non-planar InP substrates using chemical beam epitaxy

The authors discuss the growth of InP, InGaAs and InGaAsP layers on nonplanar InP substrates. 2 /spl mu/m wide ridges oriented along [11~0] and [110] with (111)A, (211)A, (111)B or (55~1) sidewall planes were prepared on (100)-oriented InP substrates by wet chemical etching. The height of the mesas ranged from 0.5 to 2 /spl mu/m and they were separated by 2 to 20 /spl mu/m wide valleys. Selective area growth of InP, InGaAs and InGaAsP layers was observed on a surface with ridges oriented along [110] with (111)B sidewall facets. This behavior has been applied to tailor a buried heterostructure with the same room temperature intensity as if it was grown on a planar substrate. This suggests that an array of buried heterostructure lasers can be grown by a single chemical beam epitaxy growth step on a nonplanar substrate.<>