Incorporation of group III elements in chemical beam epitaxy of GaInAsP alloys

The authors describe quantitatively the incorporation of group III elements during the chemical beam epitaxy (CBE) growth of GaInAsP alloys. They report key parameters that influence CBE growth of GaInAsP alloys when TEGa, TMIn, AsH/sub 3/ and PH/sub 3/ sources are used in the 480/spl deg/C-520/spl deg/C substrate temperature range. The indium incorporation ratio is quasi-insensitive to the growth conditions. In contrast, two main factors must be taken into account for the gallium incorporation. The factors are (1) a strong inhibition due to the presence of indium. This mechanism is not very dependent on the substrate temperature. (2) A strong temperature dependence when phosphorus is present. A set of linear relations to describe these effects is proposed.<>