High performance InGaAs/InP JFETs with step-doped channel doping for OEIC receivers

The structure of InGaAs/InP junction field effect transistors with step-doped channel profiles for optoelectronic integrated circuit (OEIC) receiver applications is described. Transistors with a gate length of 3 microns have transconductances of 140 mS/mm, transit frequencies of 11.6 GHz and gate leakage currents around 1 /spl mu/A/mm. An excess noise factor of 1.5 was measured for transistors operated in optoelectronic integrated receivers.<>