A monolithic tunable high-Q InAlAs/n/sup +/-InP-HFET resonator

The authors propose and demonstrate a novel monolithic active resonator network for an integrated band-pass filter application. The resonator's natural frequency and Q factor are electronically tunable. The resonator circuit was fabricated and tested in a metal-organic chemical vapor deposition (MOCVD)-grown InAlAs/n/sup +/-InP-heterostructure FET (HFET) process containing two levels of Au metal interconnect, metal-insulator-metal (MIM) capacitors, mesa etched resistors and HFET diodes. The InP active resonator network achieved a natural frequency resonance of 7.7 GHz and a Q factor of over 3000. This represents two orders of magnitude improvement over prior art.<>