Focused ion beam lithography and implantation

The author surveys ion beam lithography and maskless, resistless implantation. These applications generally demand the most sophisticated machinery including high voltage and mass separation, and so far they have been demonstrated only in the research laboratory. However, their long-range impact may be significant. In lithography, the absence of proximity effect and the ability to expose resist with fine features and vertical sidewalls without multilevel techniques offer distinct advantages. Focused ion beam implantation may, in special cases, be substituted for conventional fabrication, for example in CMOS threshold adjust and in special GaAs devices. The key issue of writing time is examined.<>