Interface state generation due to electron tunneling into thin oxides

An investigation of interface state generation due to tunneling current injection into gate oxides for various oxide thicknesses is discussed. The experimental results provide strong evidence that interface state generation is triggered by holes passing through the Si/SiO/sub 2/ interface, even in electron injection. Another degradation mode also exists in ultrathin oxides (about 5 nm) where the voltage applied across the oxide is lower than 6.8 V.<>