Gate recessed (GR) MOSFET with selectively halo-doped channel and deep graded source/drain for deep submicron CMOS

A new recessed channel MOSFET, Gate Recessed MOSFET, is proposed to improve the reliability and the performance of deep submicron devices. GR-MOSFET is designed to have a lateral doping profile of S/D and channel gradually decreasing near both channel ends. This doping profile is obtained by selective doping of the channel and S/D without counter-doping and results in eliminating the tradeoff between DIBL (drain-induced barrier lowering) and hot carrier effects. The fabricated 0.25 /spl mu/m GR-MOSFET with 10 nm gate oxide has exhibited 15% higher transconductance, 10% increased saturation current at V/sub D/=V/sub G/=3.3V, 1 V higher BV/sub DSS/ and 6 times less substrate current compared with a LDD-MOSFET of the same effective gate length.<>