Negative resistance VLSI integrable devices

A majority of the proposed up-to-date negative resistance (N.R.) elements, being based on resonant tunneling or other quantum effects, lack compatibility with the silicon VLSI process. This work thus proposes two novel, not only silicon, but even more desirable CMOS compatible, N.R. Structures. The first is obtained by slightly modifying the vertical bipolar transistor, commonly used in BiCMOS technologies. The second is a hybrid device consisting of a 3-D co-integration in an SOI film of two separately operational devices: a lateral bipolar transistor and an accumulation mode MOSFET. When activating simultaneously both transistors, this same structure also exhibits the N.R. characteristic.<>