A new L-H interface concept for very high efficiency silicon solar cells

The authors have designed a new back surface field (BSF) solar cell with a substructure of the multi-interface L-H type. Some normally separate phenomena are taken into account simultaneously to model a complex interface inserted in the cell emitter. The theoretical modelization and one-dimensional numerical simulation (using the PC-1D software package) show its yield to be 35-40%. In practice, this would necessitate uniting recent technological advances in the same thin sub-structure to ensure: (i) the absorption of low energy photons; (ii) the optical confinement of the infrared light; and (iii) the formation of an inserted highly doped thin film (/spl delta/-doping properties).<>