Deposition of high quality a-(Si,Ge):H films and novel graded gap devices using RF triode glow discharge deposition

The authors report on the deposition of high quality, reproducible a-(Si,Ge):H films and solar cell devices using a low-pressure RF triode glow discharge. They also report on the fabrication of devices in these materials using a novel bandgap grading scheme. The devices were fabricated on tin oxide substrates and required the development of an appropriate new buffer layer.<>