Electrical characterization of ITO/p-InP solar cells

Indium tin oxide (ITO)/p-InP solar diodes were fabricated by RF magnetron sputtering with variables of hydrogen during deposition, substrate temperature and in one case, an 80 /spl Aring/ Sn:In layer between ITO and InP. Analysis by current-voltage-temperature and spectroscopic techniques reveal the healing effect of adding H/sub 2/ during deposition of ITO. Higher substrate temperature during ITO deposition gives improved ITO films but induces more surface defects. Current conduction is predominantly by thermionic emission. An 80 /spl Aring/ In:Sn layer between InP and ITO causes a significant change in all measured data.<>