GaAs and InP-based monolithically integrated transmitters and photoreceivers

High-performance GaAs and InP-based components are required for the development long- and short-distance communication links. Our work in the development of monolithically integrated transmitters and photoreceivers is described, with reference to ongoing work elsewhere. Challenges in terms of materials incompatibility and device design and intrinsic and extrinsic limits of device and circuit performance are discussed.<>