MMIC oscillator simulation considering bias-voltage dependence

For two different types of MMIC FET-oscillators, simulation results obtained by state-of-the-art methods of analysis are compared with measurements for a wide range of drain bias-voltage. Quantitatively, agreement is not yet satisfactory for practical applications. The deviations can be attributed not only to uncertainties in the nonlinear FET model but also to inherent properties of the methods of analysis.<>