High efficiency, low adjacent channel leakage GaAs power MMIC for digital cordless telephone

This paper presents the high efficiency, low spectrum distortion surface mount plastic packaged GaAs power MMIC for 1.9 GHz band Japanese digital cordless telephone. Two power MESFETs and input, interstage and output matching circuits are integrated in very small single chip of 1.0 mm/spl times/1.5 mm. The power MMIC achieves high power added efficiency (PAE) of 40.5% with low adjacent channel leakage power (Padj) of -56 dBc at Pout=22 dBm under low operating voltage of 3.0 V.<>