High performance LSI process technology: SST CBi-CMOS

A CBi-CMOS IC, with complementary high-performance bipolar and CMOS on the same wafer, is reported. The structure is based on a self-aligned high-speed bipolar process called super self-aligned process technology or SST. The fabrication process is described, and its feasibility is confirmed by evaluating some devices fabricated by this technology. With a single 5-V supply, a propagation time delay of 160 ps has been measured for a 1- mu m-gate-length CMOS ring oscillator. n-p-n and p-n-p transistors have also been fabricated with f/sub T/ values of 16.9 and 7.5 GHz, respectively.<>