(AlGa)As/(InGa)As strained-quantum-well FETs on silicon dioxide by selective device lift-off as an alternative to heteroepitaxy

The authors have successfully applied a selective lift-off technique, originally developed for minimally strained (AlGa)As/GaAs films, to transfer 1- mu m-gate-length depletion-mode (AlGa)As/(InGa)As strained-quantum-well field-effect transistors (FETs) from GaAs substrates to glass slides. Peak transconductance of the transistors was unchanged by the transfer. As an alternative to heteroepitaxial growth, this technique provides improved flexibility for the realization of complex hybrid electronic or optoelectronic systems.<>