A multilevel tungsten interconnect technology

A multilevel tungsten (W) interconnect technology which is inherently planar has been developed to meet metallisation requirements for VLSI. The W interconnect technology relies on implanting Si into oxide channels, which are later selectively filled with W. The technology has been extended to realize three levels of W metallization. Its advantages include a planar surface after each level of metallization, self-aligned and stacked vias, and high resistance to electromigration. The minimum metal pitch is 2 mu m at all levels. Line resistivity is approximately 7 mu Omega -cm, and contact resistance is less than 0.5 Omega /contact.<>