A novel NVRAM cell technology for high density applications

A novel nonvolatile random-access memory (NVRAM) cell is proposed for high-density applications. This cell combines dynamic RAM performance with the nonvolatility of an EEPROM (electrically erasable programmable read-only memory) and permits the simultaneous transfer of all dynamic RAM data on the chip to the EEPROM. The data transfer is completed in less than 10 ms. The single-cell endurance exceeds 10/sup 5/ store cycles. A cell 79- mu m/sup 2/ in size is realized using 1.2- mu m process technology. The charge retention characteristic is favorable for 256-kb dynamic RAM operation.<>