Observation of rhodium- and iridium-related deep levels in In/sub 0.53/Ga/sub 0.47/As

We investigated the doping of In/sub 0.53/Ga/sub 0.47/As with rhodium and iridium by Liquid Phase Epitaxy and observed for the first time Rh- and Ir-related levels in InGaAs by means of Deep Level Transient Spectroscopy. Both dopants were found to produce near-midgap levels. The available data support an association of these levels with the TM/sup 2+/3+/-single acceptor transitions caused by substitutionally incorporated TM-ions on cation sites. The distribution coefficients determined from the trap concentrations in the layers are rather small, of the order of 1/spl times/10/sup -6/.<>