Close-spaced MOCVD reactor for 1%-uniformity growth of In-containing materials on 4" substrates

We have designed, built, and characterized a reactor for highly uniform, abrupt-interface growth of InP and other materials onto 4"-diameter substrates. The reaction chamber features a water-cooled "showerhead"-type distributed injection scheme located in close proximity to the wafer. Metalorganic chemical vapor deposition (MOCVD) growth in this system has resulted in very uniform layers (better than 1% for both thickness and composition) of Ga/sub (1-x/)In/sub (x/)As, Ga/sub (1-x/)In/sub (x/)P, Al/sub (x/)Ga/sub (1-x/)As, InP, and GaAs on 4" substrates.<>