A deep-submicrometer MOSFET model for analog/digital circuit simulations

An accurate drain current model for deep-submicrometers MOSFETs down to the L/sub eff/=0.25 mu m for digital as well as analog applications has been developed. The model is based on the recently improved physical understanding of deep-submicron MOS devices. Care has been taken to retain the basic functional from fully physical models while improving model accuracy and computational efficiency. The ease of parameter extraction was also a major consideration. In addition to the effects commonly included in MOSFET current equation, the inversion-layer capacitance effect, hot-electron-induced output-resistance degradation, and source/drain parasitic resistance effect have been taken into account.<>