An electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD)

This paper describes an electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD). Electrothermal transient characteristics in ESD protection devices are clarified in detail by modeling of complicated snapback behavior and thermal modeling in the multiple layer. The new model allows the simulation for the damage region and failure thresholds of n-MOSFETs under ESD stress conditions.<>