Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/

Time-Dependent Dielectric Breakdown (TDDB) data are presented for 15- and 22.5-nm oxides collected over a wide range of electric fields and temperatures. The results indicate that it is necessary to obtain data over this range to distinguish between the two field acceleration models and to quantify the electric field and temperature dependencies of the thermal activation energy and the field acceleration factor, respectively. We also report on the TDDB characteristics of thin SiO/sub 2/ films at temperatures as high as 400/spl deg/C and demonstrate the use of these temperatures to accelerate TDDB.<>