Fabrication and characterization of AlGaInP multiple-quantum-wire lasers

We report on the fabrication of the first AlGaInP visible laser diodes with multiple quantum wire active regions formed in situ during gas source molecular beam epitaxy. No regrowths or ex situ fabrication procedures were employed in the formation of the quantum wires. Quantum wires with cross-sectional dimensions of approximately 50 AA*120 AA were achieved with a linear wire density of 100/ mu m. Broad area stripe geometry lasers with contact stripe oriented in the [110] and [110] directions had an anisotropic threshold current density ratio of more than 3.75. Lower threshold current densities were obtained for lasers with contact stripes in the [110] direction, perpendicular to the quantum wires. Strong dependence of electroluminescence polarization on contact stripe direction was observed with a TE/TM intensity ratio of over 275.<>