Electron bombarded semiconductor gain in CVD diamond

Diamond films with metal electrodes were evaluated for use as an electron bombarded semiconductor (EBS) target gain medium for hybrid vacuum-semiconductor amplifier applications, such as hybrid photomultiplier tubes (PMT) or hybrid vacuum tube amplifiers. In this report we present: (1) measurements of electron-bombarded semiconductor (EBS) gain in synthetic CVD diamond thin films, (2) robustness characteristics of the diamond EBS detectors to high temperature cesiation, and (3) effects of electron beam damage. We conclude that diamond is a superior EBS material for high temperature/high power bandwidth applications.<>