Hot-carrier degradation of p-MOSFET's in analog operation: the relevance of the channel-length-independent drain conductance degradation

In this work, we investigate the hot-carrier degradation of p-MOSFET's with channel lengths up to 10 mu m used for analog operation, and monitor the device parameters relevant for this mode. While the transconductance g/sub m/ shows the usual decrease in degradation for greater lengths, we show the drain conductance g/sub DS/ to yield a strong degradation independent of channel length. We demonstrate a method of extrapolation to operating conditions and present circuits in which we expect problems with this new effect.<>