High quality high rate SiO/sub 2/ and SiN room temperature formation by utilizing high excited ions

A new ECR (Electron Cyclotron Resonance) plasma CVD system is proposed to form high quality SiO/sub 2/ and SiN films with high rates. The system feature applies a high frequency, which ions can follow to the substrate. The system efficiently utilizes high excited ions. This system provides, without heating; 1) SiO/sub 2/ films in which Si-O bond strength and density are equivalent to a thermal oxidation (Ca. 1000 degrees C) film and can be formed at more than 1.2 mu m/min, and 2) SiN films in which density and resistivity are more than the films formed by conventional plasma CVD systems can be formed at more than 0.8 mu m/min. In addition, Si-H bond-free films can be achieved.<>