A global optimization of bipolar model parameters using simulated diffusion

In this paper, a novel parameter extraction algorithm based on modified simulated diffusion (SD) is presented. The utility of this program is demonstrated by applying it to the parameter extraction of a 40 V bipolar transistor and a 2 /spl mu/m polysilicon emitter bipolar transistor. It is the first time that DC and AC bipolar model parameters have been extracted simultaneously via the global optimization methodology using SD. Indeed this tool, supported by an excellent agreement between the measured and simulated data, is a powerful means for the modeling of any devices.<>