A test chip and an accurate measurement system to characterize hot hole injection in the gate oxide of p-MOSFETs

This paper describes a test chip and an accurate system to measure the injection probability of hot holes from silicon into silicon dioxide, and to extract the corresponding mean free path in the silicon substrate, overcoming some of the difficulties inherent to the measurement of small hole gate currents. The results cover a wide range of substrate and oxide fields, and represent a suitable data set to: 1) extend the use of the simple "lucky electron model" to holes; 2) to verify more complex transport and injection models for holes in MOS devices.<>