Dual gate MOS thyristor (DGMOT)

A novel MOS-gated thyristor structure called the dual-gate MOS thyristor (DGMOT) is proposed. In this device the insulated-gate bipolar transistor (IGBT) mode turn-off is attained due to the integration of a lateral n-MOSFET with the thyristor structure, while the thyristor mode operation is achieved in the on-state. Consequently, the on-state voltage of the DGMOT is much lower than that of the IGBT with almost the same turn-off time. This result suggests that the DGMOT could be a superior alternative to the IGBT for a low-frequency circuit.<>