Numerical analysis of silicon carbide Schottky diodes and power MOSFETs

A silicon carbide (SiC) device simulator has been developed to exactly evaluate the electrical characteristics of SiC power devices. Avalanche breakdown voltages were predicted based on the ionization integral method for high-resistivity n-type diodes (<1.0*10/sup 16/ cm/sup -3/ donor concentration). The calculated value for concentrations of 2.0*10/sup 15/ cm/sup -3/ was 40% lower than a previous prediction. It was predicted that 4500-V platinum-SiC diodes would have a forward voltage drop of 3.3 V for 100 A/cm/sup 2/ and that 4500-V MOSFETs would have a specific on-resistance of 0.023 Omega -cm/sup 2/. The breakdown voltages of Schottky diodes with low-barrier-height metals such as titanium are determined by large leakage currents and not by avalanche breakdown. The reverse recovery time of a Schottky diode can be less than 10 ns even for the fast switching case.<>