Josephson-CMOS memories

Results of an experiment on Josephson-CMOS memories show that these circuits have the potential to remove the memory bottleneck faced by superconductive electronics and the speed limitations of purely CMOS memories. The experiment demonstrates monolithic integrated Nb-AlO/sub x/-Nb Josephson-CMOS digital circuits operating at 4 K, the feasibility of Josephson-CMOS interface circuits with conversion delays of less than 150 ps, and fluxoelectronic current sensing of MOS RAM and CAM (content-addressable memory) cells using 4JL gates and SQUIDs (superconducting quantum interference devices).<>