Characteristics of a new gate drive circuit for high-side N-MOSFET applied to high voltage circuits

This paper deals with some characteristics of a new type of gate drive circuit of high-side N-MOSFET, which is connected to the positive side line (high-side) of high voltage DC power supply (of more than 100 V). Construction and operation of the proposed gate drive circuit are explained, and analytical solutions describing steady-state and transient characteristics, which is useful for circuit design, are obtained. Experimental results are also presented, showing good agreement with the analytical results.<>