18-40 GHz semi-monolithic balanced cascade amplifiers using AlGaAs/InGaAs P-HEMT and GaAs MESFET

18-40-GHz semimonolithic balanced cascade amplifiers have been developed by using AlGaAs/InGaAs pseudomorphic HEMTs (high electron mobility transistors) and GaAs MESFETs. The authors describe the design, fabrication, and performance of the modules and demonstrate the advantages of semimonolithic process technology for millimeter-wave applications. The P-HEMT amplifier is shown to exhibit a gain of 5.7+0.4 dB and a noise figure of less than 3.6 dB. The three-stage amplifier exhibits a gain of 15.6+0.8 dB, a noise figure of less than 4.2 dB, input/output return losses of better than 9.0 dB, and a 1-dB compressed power of greater than 11.0 dBm.<>