MCQW intensity optical modulator for InP based MMIC/photonics integrated circuits

Chip level integration of photonic devices and MMICs (monolithic microwave integrated circuits) are discussed. The focus is on an InP-based multicoupled quantum well (MCQW) intensity optical modulator. In the proposed configuration, the microwave field induces a periodic structure via the electrorefractive effect. The interaction of light with the induced grating yielding a modulated optical signal. The structure and expected performance of the device are discussed. Simulations reveal that a 270- mu m-long device, operating at -40 V, has a projected bandwidth of 14 GHz at a modulation depth of 0.5. The optical loss for this device length is only 0.24 dB.<>