Electromagnetic feedthrough in Si/ZnO-SAW-devices

Electromagnetic feedthrough is a problem in Si/ZnO-surface acoustic wave (SAW)-devices. Parasitic elements providing the electromagnetic feedthrough and methods for calculating these elements are discussed and compared with measurements. The application of these results to the MZOS-FET-convolver and phase-shift keyed (PSK)-filter enables the calculation of the electromagnetic feedthrough in these structures. The influence of packaging the devices, of bonding wires and contact resistances is found to be very important. The output caused by parasitic networks of a number of devices is calculated and the results are presented. Possibilities for minimizing the electromagnetic feedthrough are discussed. Technological steps providing a higher feedthrough attenuation are shown. The application of silicon-on-insulator (SOI)-structures to prepare SAW-devices with minimal electromagnetic feedthrough is discussed.<>