Amorphous silicon anti-fuse for high-speed FPGA application

Amorphous silicon has been used as a programmable material for a metal-to-metal anti-fuse. A study on the characteristics of such an anti-fuse and the parameters that affect its programming characteristics is presented. In the unprogrammed state the resistance of the anti-fuse is greater than 1 G Omega and the capacitance is less than 1.3 fF. Programmed state resistances of less than 50 Omega have been achieved. This technology is in production for a 1.0- mu m CMOS-based 1000-gate field programmable gate array (FPGA).<>