Future devices and modules for power electronic applications

Based on continuing progress of power semiconductor devices and modules, an attempt is made to analyze the dynamics in the field of power electronics. Although discrete devices, like the GTO, are likely to dominate high power applications, possibly for another 10 years, FET-driven devices, like the IGBT, are expected to expand further into medium power applications. In addition, economic reasons will promote the use of modules for applications involving gradually higher power. Power integrated circuits and smart devices in turn might gain in volume but may remain limited in power due to dissipation problems.<>