A study on circuit simulation using GTO thyristor modeling

This study establishes a numerical model of a three junction GTO device. A three-junction configuration provides good visualization of the model's performance and understanding of the significance of the parameters. Modeling methods are provided using the micromodel method and macromodel method. The problems to be considered for the snubber design such as voltage spike reduction, maximum GTO anode current, and switching power are discussed using the calculation model. As result of the calculations, the snubber circuit stray inductance is found to play an important role in optimizing the minimum switching power loss. Thus, the proposed model GTO device model in this paper solves conventionally difficult problems which cannot have simulation results since convergence cannot be accomplished well in the simulation process and hence cannot treat a simulation completely.<>