Computer controlled measurement of power MOSFET transient thermal response

A measurement system for the computer controlled power MOSFET transient thermal response is presented. On the basis of a measured semiconductor's temperature sensitive parameter (TSEP), the transient thermal impedance curve (TTIC) is calculated. Using THERM software and TTIC measured points, an identification of the semiconductor's thermal model equivalent parameters is provided. A comparison of measured and approximated TTIC shows that the procedure is very exact.<>