Reliability testing of state-of-the-art PM HEMT MMICs three-stage low-noise amplifier

Reliability testing of three-stage, low-noise PM (pseudomorphic) HEMT (high-electron-mobility transistor) MMICs (monolithic microwave integrated circuits) was performed with constant stress accelerated life tests at three temperatures. The reliability of PM HEMT MMICs was found to be as excellent as that of discrete HEMTs. The MTF is 2*10/sup 6/ h at a 125 degrees C channel temperature. This result is based on the failure criteria of noise figure and gain change of 0.5 and 1.0 dB, respectively, at 26.5 GHz. From the observed activation energy of 1.3 eV and the gate voltage shift, the failure mechanism was probably due to a combination of gate-sinking and oxygen diffusion into the active channel region of unpassivated HEMTs.<>