Experimental static and dynamic characteristics of MOS-controlled thyristor

Experimental results are given for a PMOS-controlled thyristor (PMCT). The static I/sub A/-V/sub AK/ characteristics of a PMCT were measured using a programmable high-power curve tracer for both forward and reverse anode-to-cathode voltage V/sub AK/ at different temperatures. The characteristics are similar to the I/sub D/-V/sub D/ characteristics of typical p-n junction diodes. The device has a low forward voltage drop at high current levels, e.g. V/sub F(AK)/=1.6 V at I/sub A/=200 A. The dynamic behavior of the PMCT was measured in a single switch configuration under resistive loading. The transient waveforms of anode current, gate current, anode-to-cathode voltage, and gate-to-anode voltage were observed at turn-on and turn-off for power levels up to 5 kW. The measured turn-on time was 0.3 mu s and the measured turn-off time was 2.2 mu s. The switching power loss and the conduction power loss were 3 W and 18 W, respectively.<>