A resistive-gate two-phase 2DEG CCD for III-V IR detectors

A device structure for two-phase operation of a two-dimensional electron gas charge-coupled device (2DEG CCD) has been demonstrated which exhibits a charge transfer efficiency exceeding 0.999 at 26 MHz. It also exhibits a large charge handling capacity (3.0 million electrons/pixel). The Al/sub 0.3/Ga/sub 0.7/As/GaAs modulation-doped heterostructure utilizes a resistive cermet gate with recesses to achieve two-phase operation. The structure is compatible with advanced III-V infrared detectors for monolithic integration in future orbiting imaging systems.<>