A 10 Gb/s laser driver in InP/InGaAs HBT technology

The first bipolar laser driver integrated circuit to operate at 10 Gb/s is reported. InP/InGaAs heterostructure bipolar transistors (HBTs) were used and a 100 mA peak-to-peak modulation current was achieved. The HBTs were grown using hydride source molecular beam epitaxy. The driver was tested by applying a 10 Gb/s pseudo-random data signal from an Anritsu pattern generator to the input buffer with V/sub cc/=4 V. A clear and open eye-pattern was obtained for the laser driver at 10 Gb/s.<>