Ultrahigh-speed InGaAs-based HEMT technology

The HEMT (high electron mobility transistor) LSI perspective is presented, and technological challenges for VLSI are addressed, including the performance advantage in the deep-submicron range, device size and voltage scaled-down approaches, and self-aligned InGaAs-based HEMTs. In addition, the future directions of HEMT technology are projected, focusing on InGaAs-based device technology compared with GaAs-based HEMT LSI technology.<>