The interface properties of ITO/p-InP due to DC magnetron sputter disposition in hydrogen

The authors investigate the surface modification of InP by hydrogenation that occurs during fabrication of the indium tin oxide (ITO)/InP device. They attempt to establish relationships between hydrogen pressure in the sputtering environment and the change in the near-surface properties of p-type InP substrates. Specific near-surface properties will include the carrier concentration and junction depth. Because it has been previously observed that solar cell performance is affected by post-deposition heat treatment (PDHT), this will be systematically performed and studied. From this analysis, it is shown that effects due to hydrogenation can be relaxed by PDHT, resulting in a Schottky-like ITO/InP junction behavior.<>